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  Datasheet File OCR Text:
 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION With TO-220C package The BD707 and BD711are respectively complement to type BD708 and BD712 APPLICATIONS Intented for use in power linear and switching applications.
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
BD707 BD709 BD711
Absolute maximum ratings(Ta=25ae )
SYMBOL
VCBO
IN

PARAMETER
CONDITIONS BD707 BD709 BD711
Collector-base voltage
Open emitter
VCEO
Collector-emitter voltage
ANG CH
BD707 BD709 BD711
SEM E
Open base
OND IC
TOR UC
VALUE 60 80 100 60 80 100
UNIT
V
VEBO IC ICM IB PT Tj Tstg
Emitter-base voltage
Open collector
5 12 18 5
V A A A W ae ae
Collector current-DC Collector current-Pulse Base current Total dissipation Junction temperature Storage temperature TC=25ae
75 150 -65~150
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 1.67 UNIT ae /W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BD707 BD709 BD711
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER BD707 VCEO(SUS) Collector-emitter sustaining voltage BD709 BD711 VCEsat VBE Collector-emitter saturation voltage Base-emitter voltage BD707 ICBO Collector cut-off current BD709 BD711 IC=4A ,IB=0.4A IC=4A , VCE=4V VCB=60V, IE=0 TC=150ae VCB=80V, IE=0 TC=150ae VCB=100V, IE=0 TC=150ae VCE=30V, IB=0 VCE=40V, IB=0 VCE=50V, IB=0 VEB=5V; IC=0 IC=0.1A, IB=0 CONDITIONS MIN 60 80 100 1.0 1.5 0.1 1.0 0.1 1.0 0.1 1.0 V V V TYP. MAX UNIT SYMBOL
mA
ICEO
Collector cut-off current

BD707 BD709 BD711
IEBO hFE-1 hFE-2 hFE-3
Emitter cut-off current DC current gain
DC current gain only for BD707/709 DC current gain
HAN INC
SEM GE
BD707 BD709 BD711
IC=0.5A ; VCE=2V
OND IC
40 30 15 5
TOR UC
0.1 1.0 120 400 150 10 8 8
mA
mA
IC=2A ; VCE=2V IC=4A ; VCE=2V
hFE-4
DC current gain
IC=10A ; VCE=4V
fT
Transition frequency
IC=0.3A;VCE=3V;
3
MHz
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
BD707 BD709 BD711
SEM GE
HAN INC
OND IC
TOR UC
Fig.2 Outline dimensions
3


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